Numerical Characterization of Cu(In,Ga)Se2 Solar Cells Using Capacitance-Voltage and Capacitance-Frequency Characteristics

Daouda Oubda, Marcel B. Kebre, Soumaïla Ouédraogo, François Zougmoré, Frédéric Ouattara, Zacharie Koalga

Abstract


The paper presents the effects of buffer layer thickness, operating temperature, and series resistances on the capacitance-voltage and capacitance-frequency (C-f) characteristics of the standard ZnO/CdS/OVC/Cu(In,Ga)Se2/Mo thin film solar cells.
The numerical simulation tool used is a one dimensional program: Solar Cell Capacitance Simulator (SCAPS). We found that, the junction capacitance value increases when the recombination rate of carrier becomes important resulting in an increasing of electrical field intensity. Series resistances (Rs) are factors limiting the solar cells performance. This paper proposes a theoretical model where the effects of Rs onto the solar cell are minimized. For a better optimization of solar cell model performance we get a value of Rs ≤1 Ω*cm², Rsh≥1000 Ω*cm² and the operating temperature to the order of 260 to 380 K.


Keywords


Buffer layer; Operating temperature; Rs; Recombination rate; Electrical field intensity; Capacitance value.

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References


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